Datasheet4U.com

K9HCG08U1M - FLASH MEMORY

Product Overview

Samsung Electronics

📥 Download Datasheet

K9HCG08U1M FLASH MEMORY by Samsung Electronics - Datasheet Preview — Datasheet preview – K9HCG08U1M

Datasheet Details

Part number	K9HCG08U1M
Manufacturer	Samsung Electronics
File Size	1.49 MB
Description	FLASH MEMORY
Datasheet	K9HCG08U1M Datasheet
Additional preview pages of the K9HCG08U1M datasheet.

Product details

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
K9MDG08U5M: 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Er.

📁 Similar Datasheet

K9HCG08U1D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9HCG08U1E - 16Gb E-die NAND Flash (Samsung)
K9HCG08U5D - FLASH MEMORY (Samsung)
K9HAG08U1M - Flash Memory (Samsung)
K9HDG08U5A - 32Gb A-die NAND Flash (Samsung)
K9HDG08UXB - 32Gb B-die NAND Flash (Samsung)
K9HDGD8S5M-B - FLASH MEMORY (Samsung)
K9HDGD8U5M-B - FLASH MEMORY (Samsung)

Other Datasheets by Samsung Electronics

K9HBG08U1M - Flash Memory

Published: Sep 7, 2010 |