logo

K9HCG08U1M Datasheet, Samsung Electronics

K9HCG08U1M memory equivalent, flash memory.

K9HCG08U1M Avg. rating / M : 1.0 rating-12

datasheet Download

K9HCG08U1M Datasheet

Features and benefits


* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
* Automatic Program and Erase - Pa.

Application

where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, .

Description

Offered in 4Gx8bit, the K9LBG08U0M is a 32G-bit NAND Flash Memory with spare 1G-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,224-by.

Image gallery

K9HCG08U1M Page 1 K9HCG08U1M Page 2 K9HCG08U1M Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts